FNO-Based Inverse Co-Design of Semiconducting Quantum-Dot Devices

Source: arxiv.org/abs/2611.06994

Marek Rychetsky, Valentin Duruisseaux, Freya Shah, David L. Craig, Ming Ni, Georgios Katsaros, Taylor L. Patti, Anima Anandkumar, Natalia Ares

arXivarxiv/2611.06994Nov 4, 2026quant-phscore 0

Gate-defined semiconductor quantum dots are promising building blocks for scalable spin-based quantum processors, however their operational properties depend on several fabrication and control parameters, such as lithographic gate layout and applied voltages. Existing device architectures have been refined through repeated fabrication and experimental testing, producing layouts that support reliable device operation. However, this process does not exhaustively explore the design space, limiting the ability to obtain qubits with targeted properties. We address these challenges by presenting a…

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