Cooling-path-selected self-assembly of telecom InAsP quantum dots

Source: arxiv.org/abs/2611.01214

Yiteng Zhang, Doaa Abdelbarey, Markus Etzkorn, Zenghui Jiang, Ankita Choudhary, Andreas Schaate, Tom Fandrich, Xin Cao, Chenxi Ma, Arijit Chakraborty, Eddy Patrick Rugeramigabo, Michael Zopf, Fei Ding

arXivarxiv/2611.01214Oct 31, 2026quant-phscore 0

Epitaxial quantum dots are leading solid-state sources of quantum light, but reproducible growth on indium phosphide (InP) remains challenging because dot-formation windows are narrow and emission wavelengths are difficult to predict. Here we report a new epitaxial route for InAsP quantum dots on InP(001), in which the cooling path selects the final morphology without intentional deposition of group-III dot material. High-temperature As exposure forms a shallow near-surface InAsP layer through As-P exchange; the cooling path and continued As supply determine whether three-dimensional islands…

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