Control-Noise Trade-offs in Industrially Integrated ${}^{28}\mathrm{Si}/\mathrm{SiGe}$ Spin-1/2 Qubits

Leon C. Camenzind, Ik Kyeong Jin, Yi-Hsien Wu, Akito Noiri, Kenta Takeda, Takashi Nakajima, Takashi Kobayashi, Giordano Scappucci, Seigo Tarucha

arXivarxiv/2610.41890Oct 30, 2026quant-phscore 0

Scaling silicon spin qubits to fault-tolerant processors requires semiconductor foundry integration, yet it remains unclear how industrial fabrication and dense device integration affect qubit control and noise. Here we study ${}^{28}\mathrm{Si}/\mathrm{SiGe}$ electron spin-1/2 qubits fabricated using Intel's industry-compatible 300 mm process and incorporating micromagnets for electrically driven spin resonance, using a high-performance device fabricated in the RIKEN research cleanroom as a reference. Primitive $π/2$-gate fidelities reach the 99.99% level in the Intel devices, which also…

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